Method for preparing semiconductor device structure with multiple liners

ABSTRACT

A semiconductor device structure includes a silicon-on-insulator (SOI) region. The SOI region includes a semiconductor substrate, a buried oxide layer disposed over the semiconductor substrate, and a silicon layer disposed over the buried oxide layer. The semiconductor device structure also includes a first shallow trench isolation (STI) structure penetrating through the silicon layer and the buried oxide layer and extending into the semiconductor substrate. The first STI structure includes a first liner contacting the semiconductor substrate and the silicon layer, a second liner covering the first liner and contacting the buried oxide layer, and a third liner covering the second liner. The first liner, the second liner and the third liner are made of different materials. The first STI structure also includes a first trench filling layer disposed over the third liner and separated from the second liner by the third liner.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. Non-Provisionalapplication Ser. No. 17/245,795 filed Apr. 30, 2021, which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates to a method for preparing a semiconductordevice structure, and more particularly, to a method for preparing asemiconductor device structure with multiple liners.

DISCUSSION OF THE BACKGROUND

Semiconductor devices are essential for many modern applications. Withthe advancement of electronic technology, semiconductor devices arebecoming smaller in size while providing greater functionality andincluding greater amounts of integrated circuitry. Due to theminiaturized scale of semiconductor devices, various types anddimensions of semiconductor devices providing different functionalitiesare integrated and packaged into a single module. Furthermore, numerousmanufacturing operations are implemented for integration of varioustypes of semiconductor devices.

However, the manufacturing and integration of semiconductor devicesinvolve many complicated steps and operations. Integration insemiconductor devices becomes increasingly complicated. An increase incomplexity of manufacturing and integration of the semiconductor devicemay cause deficiencies. Accordingly, there is a continuous need toimprove the manufacturing process of semiconductor devices so that theproblems can be addressed.

This Discussion of the Background section is provided for backgroundinformation only. The statements in this Discussion of the Backgroundare not an admission that the subject matter disclosed in this sectionconstitutes prior art to the present disclosure, and no part of thisDiscussion of the Background section may be used as an admission thatany part of this application, including this Discussion of theBackground section, constitutes prior art to the present disclosure.

SUMMARY

In one embodiment of the present disclosure, a semiconductor devicestructure is provided. The semiconductor device structure includes asilicon-on-insulator (SOI) region. The SOI region includes asemiconductor substrate, a buried oxide layer disposed over thesemiconductor substrate, and a silicon layer disposed over the buriedoxide layer. The semiconductor device structure also includes a firstshallow trench isolation (STI) structure penetrating through the siliconlayer and the buried oxide layer and extending into the semiconductorsubstrate. The first STI structure includes a first liner contacting thesemiconductor substrate and the silicon layer, a second liner coveringthe first liner and contacting the buried oxide layer, and a third linercovering the second liner. The first liner, the second liner and thethird liner are made of different materials. The first STI structurealso includes a first trench filling layer disposed over the third linerand separated from the second liner by the third liner.

In an embodiment, the first liner completely separates the second linerfrom the semiconductor substrate and the silicon layer. In anembodiment, the first liner includes a first portion and a secondportion covering opposite sidewalls of the silicon layer, and a thirdportion disposed between the second liner and the semiconductorsubstrate, wherein the first portion, the second portion and the thirdportion of the first liner are disconnected with each other. In anembodiment, the first liner is made of silicon oxide, the second lineris made of nitride, and the third liner is made of silicon oxynitride.In addition, a first etching selectivity exists between the second linerand the first trench filling layer, and a second etching selectivityexists between the third liner and the first trench filling layer.

In an embodiment, the semiconductor device structure further includes apad oxide layer disposed over the silicon layer of the SOI region, and apad nitride layer disposed over the pad oxide layer, wherein the firstSTI structure penetrates through the pad oxide layer and the pad nitridelayer, and wherein sidewalls of the pad oxide layer and sidewalls of thepad nitride layer are covered by and in direct contact with the secondliner of the first STI structure. In an embodiment, the semiconductordevice structure further includes a second shallow trench isolation(STI) structure penetrating through the pad oxide layer and the padnitride layer and extending into the semiconductor substrate. The secondSTI structure includes a second trench filling layer, and a fourth linerseparating the second trench filling layer from the pad oxide layer, thepad nitride layer and the semiconductor substrate. In an embodiment, thefirst STI structure is disposed in an array area, and the second STIstructure is disposed in a peripheral circuit area.

In another embodiment of the present disclosure, a method for forming asemiconductor device structure is provided. The method includes forminga pad oxide layer over a semiconductor substrate, and forming a padnitride layer over the pad oxide layer. The method also includes forminga shallow trench penetrating through the pad nitride layer and the padoxide layer and extending into the semiconductor substrate, and forminga first liner over sidewalls and a bottom surface of the shallow trench.The method further includes forming a second liner over the first liner,and forming a third liner over the second liner. In addition, the methodincludes filling a remaining portion of the shallow trench with a trenchfilling layer over the third liner, and planarizing the second liner,the third liner and the trench filling layer to expose the pad nitridelayer. The first liner and the remaining portions of the second liner,the third liner and the trench filling layer collectively form a shallowtrench isolation (STI) structure in an array area.

In an embodiment, the second liner is formed in direct contact withsidewalls of the pad oxide layer and sidewalls of the pad nitride layer.In an embodiment, a first etching selectivity exists between the secondliner and the trench filling layer, and a second etching selectivityexists between the third liner and the trench filling layer. In anembodiment, before forming the pad oxide layer, the method furtherincludes forming a buried oxide layer over the semiconductor substrate,and forming a silicon layer over the buried oxide layer, wherein theshallow trench penetrates through the buried oxide layer and the siliconlayer, and wherein the first liner is formed by performing an oxidationprocess on the silicon layer and the semiconductor substrate.

In an embodiment, the second liner is formed by a rapid thermalnitridation (RTN) process, and the third liner is formed by an in-situsteam generation (ISSG) process. In an embodiment, before forming thepad oxide layer, the method further includes forming a well region inthe semiconductor substrate, wherein the well region is p-type, and aregion of the semiconductor substrate under the well region is n-type,and wherein after the shallow trench is formed, a bottom surface of theshallow trench is higher than a bottom surface of the well region.

Embodiments of a semiconductor device structure and method for formingthe same are provided in the disclosure. In some embodiments, thesemiconductor device structure includes a shallow trench isolation (STI)structure disposed in a semiconductor substrate (or in asilicon-on-insulator (SOI) region). The STI structure includes a firstliner contacting the semiconductor substrate, a second liner coveringthe first liner, a third liner covering the second liner, and a trenchfilling layer disposed over the third liner. Since there are multipleliners disposed between the trench filling layer and the semiconductorsubstrate, the sidewalls of the semiconductor substrate interfacing withthe STI structure may be protected from being exposed during subsequentetching process. This may prevent electrical short of the semiconductordevice structure in subsequent processing steps. As a result, the deviceperformance may be enhanced.

The foregoing has outlined rather broadly the features and technicaladvantages of the present disclosure in order that the detaileddescription of the disclosure that follows may be better understood.Additional features and advantages of the disclosure will be describedhereinafter, and form the subject of the claims of the disclosure. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiment disclosed may be readily utilized as a basis formodifying or designing other structures or processes for carrying outthe same purposes of the present disclosure. It should also be realizedby those skilled in the art that such equivalent constructions do notdepart from the spirit and scope of the disclosure as set forth in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a partial schematic illustration of an exemplary integratedcircuit, including an array area and a peripheral circuit area inaccordance with some embodiments.

FIG. 2 is a cross-sectional view illustrating a cell area of asemiconductor device structure, in accordance with some embodiments.

FIG. 3 is a cross-sectional view illustrating a peripheral circuit areaof a semiconductor device structure, in accordance with someembodiments.

FIG. 4 is a cross-sectional view illustrating a cell area of asemiconductor device structure, in accordance with some embodiments.

FIG. 5 is a cross-sectional view illustrating a peripheral circuit areaof a semiconductor device structure, in accordance with someembodiments.

FIG. 6 is a flow diagram illustrating a method for forming a cell areaof a semiconductor device structure, in accordance with someembodiments.

FIG. 7 is a cross-sectional view illustrating an intermediate stage offorming a buried oxide layer and a silicon layer over a semiconductorsubstrate during the formation of a cell area in a semiconductor devicestructure, in accordance with some embodiments.

FIG. 8 is a cross-sectional view illustrating an intermediate stage offorming a pad oxide layer and a pad nitride layer during the formationof a cell area in a semiconductor device structure, in accordance withsome embodiments.

FIG. 9 is a cross-sectional view illustrating an intermediate stage offorming a shallow trench during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

FIG. 10 is a cross-sectional view illustrating an intermediate stage offorming a first liner during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

FIG. 11 is a cross-sectional view illustrating an intermediate stage offorming a second liner during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

FIG. 12 is a cross-sectional view illustrating an intermediate stage offorming a third liner during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

FIG. 13 is a cross-sectional view illustrating an intermediate stage offorming a trench filling layer during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

FIG. 14 is a cross-sectional view illustrating an intermediate stage offorming a well region in a semiconductor substrate during the formationof a cell area in a semiconductor device structure, in accordance withsome embodiments.

FIG. 15 is a cross-sectional view illustrating an intermediate stage offorming a pad oxide layer and a pad nitride layer during the formationof a cell area in a semiconductor device structure, in accordance withsome embodiments.

FIG. 16 is a cross-sectional view illustrating an intermediate stage offorming a shallow trench during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

FIG. 17 is a cross-sectional view illustrating an intermediate stage offorming a first liner during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

FIG. 18 is a cross-sectional view illustrating an intermediate stage offorming a second liner during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

FIG. 19 is a cross-sectional view illustrating an intermediate stage offorming a third liner during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

FIG. 20 is a cross-sectional view illustrating an intermediate stage offorming a trench filling layer during the formation of a cell area in asemiconductor device structure, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1 is a partial schematic illustration of an exemplary integratedcircuit, such as a memory device 1000, including an array area A and aperipheral circuit area B in accordance with some embodiments. In someembodiments, the memory device 1000 includes a dynamic random accessmemory (DRAM). In some embodiments, the array area A of the memorydevice 1000 includes a number of memory cells 50 arranged in a gridpattern and including a number of rows and columns. The number of memorycells 50 in the array area A may vary depending on system requirementsand fabrication technology.

In some embodiments, each of the memory cells 50 in the array area Aincludes an access device and a storage device. The access device isconfigured to provide controlled access to the storage device. Inparticular, the access device is a field effect transistor (FET) 51 andthe storage device is a capacitor 53, in accordance with someembodiments. In each of the memory cells 50, the FET 51 includes a drain55, a source 57 and a gate 59. One terminal of the capacitor 53 iselectrically connected to the source 57 of the FET 51, and the otherterminal of the capacitor 53 may be electrically connected to theground. In addition, in each of the memory cells 50, the gate 59 of theFET 51 is electrically connected to a word line WL, and the drain 55 ofthe FET 51 is electrically connected to a bit line BL.

The above description mentions the terminal of the FET 51 electricallyconnected to the capacitor 53 is the source 57, and the terminal of theFET 51 electrically connected to the bit line BL is the drain 55.However, during read and write operations, the terminal of the FET 51electrically connected to the capacitor 53 may be the drain, and theterminal of the FET 51 electrically connected to the bit line BL may bethe source. That is, either terminal of the FET 51 could be a source ora drain depending on the manner in which the FET 51 is being controlledby the voltages applied to the source, the drain and the gate.

By controlling the voltage at the gate 59 via the word line WL, avoltage potential may be created across the FET 51 such that theelectrical charge can flow from the drain 55 to the capacitor 53.Therefore, the electrical charge stored in the capacitor 53 may beinterpreted as a binary data value in the memory cell 50. For example, apositive charge above a threshold voltage stored in the capacitor 53 maybe interpreted as binary “1.” If the charge in the capacitor 53 is belowthe threshold value, a binary value of “0” is said to be stored in thememory cell 50.

The bit lines BL are configured to read and write data to and from thememory cells 50 in the array area A. The word lines WL are configured toactivate the FET 51 to access a particular row of the memory cells 50 inthe array area A. Accordingly, the memory device 1000 also includes theperiphery circuit area B which may include an address buffer, a rowdecoder and a column decoder. The row decoder and the column decoderselectively access the memory cells 50 in response to address signalsthat are provided to the address buffer during read, write and refreshoperations. The address signals are typically provided by an externalcontroller such as a microprocessor or another type of memorycontroller.

FIG. 2 is a cross-sectional view illustrating a cell area of asemiconductor device structure 100, such as the cell area A of thememory device 1000 in FIG. 1 , and FIG. 3 is a cross-sectional viewillustrating a peripheral circuit area of the semiconductor devicestructure 100, such as the peripheral circuit area B of the memorydevice 1000 in FIG. 1 , in accordance with some embodiments.

As shown in FIG. 2 , the cell area of the semiconductor device structure100 includes a silicon-on-insulator (SOI) region 107, which includes asemiconductor substrate 101, a buried oxide layer 103 disposed over thesemiconductor substrate 101, and a silicon layer 105 disposed over theburied oxide layer 103, in accordance with some embodiments. Moreover, apad oxide layer 109 is disposed over the SOI region 107, and a padnitride layer 111 is disposed over the pad oxide layer 109.

The cell area of the semiconductor device structure 100 also includes ashallow trench isolation (STI) structure 150 a penetrating through thepad nitride layer 111 and the pad oxide layer 109 and extending into theSOI region 107, in accordance with some embodiments. Specifically, theSTI structure 150 a penetrates through the silicon layer 105 and theburied oxide layer 103 and extends into the semiconductor substrate 101.In some embodiments, the semiconductor substrate 101 is not penetratedthrough by the STI structure 150 a.

In some embodiments, the STI structure 150 a in the cell area of thesemiconductor device structure 100 includes a first liner 123, a secondliner 125 disposed over the first liner 123, a third liner 127 disposedover the second liner 125, and a trench filling layer 129 disposed overthe third liner 127. In some embodiments, the trench filling layer 129is surrounded by the third liner 127, the third liner 127 is surroundedby the second liner 125, and the second liner 125 is separated from thesilicon layer 105 and the semiconductor substrate 101 by the first liner123. In particular, the first liner 123 has portions 123 a and 123 ccovering opposite sidewalls of the silicon layer 105, and a portion 123b separating the second liner 125 from the semiconductor substrate 101,in accordance with some embodiments.

It should be noted that the portions 123 a, 123 b and 123 c of the firstliner 123 are disconnected with each other. In some embodiments, thesidewalls of the pad nitride layer 111 and the sidewalls of the padoxide layer 109 are covered by and in direct contact with the secondliner 125. In some embodiments, the topmost surface T2 of the secondliner 125 is higher than the topmost surface T1 of the first liner 123(i.e., the top surface of the portion 123 a or the top surface of theportion 123 c). In some embodiments, the top surfaces of the secondliner 125, the third liner 127 and the trench filling layer 129 aresubstantially coplanar with each other. Within the context of thisdisclosure, the word “substantially” means preferably at least 90%, morepreferably 95%, even more preferably 98%, and most preferably 99%.

In addition, the first liner 123, the second liner 125 and the thirdliner 127 of the STI structure 150 a in the array area of thesemiconductor device structure 100 are made of different materials. Forexample, the first liner 123 is made of silicon oxide, the second liner125 is made of nitride, and the third liner 127 is made of siliconoxynitride. Furthermore, a first etching selectivity exists between thesecond liner 125 and the trench filling layer 129, and a second etchingselectivity exists between the third liner 127 and the trench fillinglayer 129.

As shown in FIG. 3 , the peripheral circuit area of the semiconductordevice structure 100 includes the semiconductor substrate 101, the padoxide layer 109, the pad nitride layer 111, and a STI structure 150 bpenetrating through the pad nitride layer 111 and the pad oxide layer109 and extending into the semiconductor substrate 101, in accordancewith some embodiments. In some embodiments, the semiconductor substrate101 is not penetrated through by the STI structure 150 b in theperipheral circuit area.

In comparison with the STI structure 150 a in the cell area of thesemiconductor device structure 100, the STI structure 150 b in theperipheral circuit area of the semiconductor device structure 100 has asingle liner instead of multiple liners. In some embodiments, the STIstructure 150 b has a liner 133 (also referred to as a fourth liner) anda trench filling layer 139 disposed over the liner 133. In someembodiments, the trench filling layer 139 is surrounded by the liner133.

Moreover, in some embodiments, the trench filling layer 139 is separatedfrom the pad nitride layer 111, the pad oxide layer 109 and thesemiconductor substrate 101 by the liner 133. In some embodiments, thetop surfaces of the liner 133 and the trench filling layer 139 aresubstantially coplanar with each other. In some embodiments, the liner133 is made of silicon oxide, and is formed by an oxidation process or adeposition process, such as a chemical vapor deposition (CVD) process oran atomic layer deposition (ALD) process.

FIG. 4 is a cross-sectional view illustrating a cell area of asemiconductor device structure 200, such as the cell area A of thememory device 1000 in FIG. 1 , and FIG. 5 is a cross-sectional viewillustrating a peripheral circuit area of the semiconductor devicestructure 200, such as the peripheral circuit area B of the memorydevice 1000 in FIG. 1 , in accordance with some embodiments.

As shown in FIG. 4 , the cell area of the semiconductor device structure200 includes a well region 207 disposed in a semiconductor substrate201, a pad oxide layer 209 disposed over the well region 207, and a padnitride layer 211 disposed over the pad oxide layer 209, in accordancewith some embodiments. In some embodiments, the region of thesemiconductor substrate 201 under the well region 207 has a firstconductivity type, and the well region 207 has a second conductivitytype opposite to the first conductivity type. For example. The region ofthe semiconductor substrate under the well region 207 is n-type, and thewell region 207 is p-type.

The cell area of the semiconductor device structure 200 also includes aSTI structure 250 a penetrating through the pad nitride layer 211 andthe pad oxide layer 209 and extending into the well region 207, inaccordance with some embodiments. In some embodiments, the well region207 is not penetrated through by the STI structure 250 a. As shown inFIG. 4 , the bottom surface B2 of the STI structure 250 a is higher thanthe bottom surface B1 of the well region 207, in accordance with someembodiments.

In some embodiments, the STI structure 250 a in the cell area of thesemiconductor device structure 200 includes a first liner 223, a secondliner 225 disposed over the first liner 223, a third liner 227 disposedover the second liner 225, and a trench filling layer 229 disposed overthe third liner 227. In some embodiments, the trench filling layer 229is surrounded by the third liner 227, the third liner 227 is surroundedby the second liner 225, and the second liner 225 is separated from thewell region 207 by the first liner 223.

In some embodiments, the sidewalls of the pad nitride layer 211 and thesidewalls of the pad oxide layer 209 are covered by and in directcontact with the second liner 225. In some embodiments, the topmostsurface T4 of the second liner 225 is higher than the topmost surface T3of the first liner 223. In some embodiments, the top surfaces of thesecond liner 225, the third liner 227 and the trench filling layer 229are substantially coplanar with each other.

In addition, the first liner 223, the second liner 225 and the thirdliner 227 of the STI structure 250 a in the array area of thesemiconductor device structure 200 are made of different materials. Forexample, the first liner 223 is made of silicon oxide, the second liner225 is made of nitride, and the third liner 227 is made of siliconoxynitride. Furthermore, a first etching selectivity exists between thesecond liner 225 and the trench filling layer 229, and a second etchingselectivity exists between the third liner 227 and the trench fillinglayer 229.

As shown in FIG. 5 , the peripheral circuit area of the semiconductordevice structure 200 includes the semiconductor substrate 201, the wellregion 207 disposed in the semiconductor substrate 201, the pad oxidelayer 209, the pad nitride layer 211, and a STI structure 250 bpenetrating through the pad nitride layer 211 and the pad oxide layer209 and extending into the well region 207, in accordance with someembodiments. In some embodiments, the well region 207 is not penetratedthrough by the STI structure 250 b in the peripheral circuit area. Insome embodiments, the bottom surface B3 of the STI structure 250 b ishigher than the bottom surface B1 of the well region 207.

In comparison with the STI structure 250 a in the cell area of thesemiconductor device structure 200, the STI structure 250 b in theperipheral circuit area of the semiconductor device structure 200 has asingle liner instead of multiple liners. In some embodiments, the STIstructure 250 b has a liner 233 (also referred to as a fourth liner) anda trench filling layer 239 disposed over the liner 233. In someembodiments, the trench filling layer 239 is surrounded by the liner233.

Moreover, in some embodiments, the trench filling layer 239 is separatedfrom the pad nitride layer 211, the pad oxide layer 209 and the wellregion 207 by the liner 233. In some embodiments, the top surfaces ofthe liner 233 and the trench filling layer 239 are substantiallycoplanar with each other. In some embodiments, the liner 233 is made ofsilicon oxide, and is formed by an oxidation process or a depositionprocess, such as a CVD process or an ALD process.

FIG. 6 is a flow diagram illustrating a method 10 for forming a cellarea of a semiconductor device structure (e.g., the semiconductor devicestructure 100 or 200), and the method 10 includes steps S11, S13, S15,S17, S19, S21, S23 and S25, in accordance with some embodiments. Thesteps S11 to S25 of FIG. 6 are elaborated in connection with thefollowing figures.

FIGS. 7-13 are cross-sectional views illustrating intermediate stages offorming the cell area in the semiconductor device structure 100, inaccordance with some embodiments. As shown in FIG. 7 , the semiconductorsubstrate 101 is provided. The semiconductor substrate 101 may be asemiconductor wafer such as a silicon wafer.

Alternatively or additionally, the semiconductor substrate 101 mayinclude elementary semiconductor materials, compound semiconductormaterials, and/or alloy semiconductor materials. Examples of theelementary semiconductor materials may include, but are not limited to,crystal silicon, polycrystalline silicon, amorphous silicon, germanium,and/or diamond. Examples of the compound semiconductor materials mayinclude, but are not limited to, silicon carbide, gallium arsenic,gallium phosphide, indium phosphide, indium arsenide, and/or indiumantimonide. Examples of the alloy semiconductor materials may include,but are not limited to, SiGe, GaAsP, AlInAs, AlGaAs, GalnAs, GaInP,and/or GaInAsP.

In some embodiments, the buried oxide layer 103 and the silicon layer105 are formed over the semiconductor substrate 101 to form a SOI region107. The SOI region 107 may be formed using separation by implantationof oxygen (SIMOX), where oxygen is implanted below the silicon surfaceand a subsequent annealing process is performed. However, otheralternative processes, such as wafer bonding, oxidation, or depositionmay alternatively be used to form the SOI region 107.

Next, the pad oxide layer 109 and the pad nitride layer 111 aresequentially formed over the SOI region 107, as shown in FIG. 8 inaccordance with some embodiments. The respective steps are illustratedas the steps S11 and S13 in the method 10 shown in FIG. 6 . In someembodiments, the pad oxide layer 109 is made of silicon oxide, such asSiO₂, and the pad nitride layer 111 is made of silicon nitride, such asSi₃N₄. The pad oxide layer 109 and the pad nitride layer 111 may beformed by thermal oxidation, CVD, ALD and/or other applicable method.

After the pad nitride layer 111 is formed, a shallow trench 120 isformed penetrating through the pad nitride layer 111, the pad oxidelayer 109, the silicon layer 105, the buried oxide layer 103 andextending into the semiconductor substrate 101, as shown in FIG. 9 inaccordance with some embodiments. In some embodiments, the bottomsurface B4 of the shallow trench 120 is located in the semiconductorsubstrate 101. The respective step is illustrated as the step S15 in themethod 10 shown in FIG. 6 .

In some embodiments, the formation of the shallow trench 120 includesforming a patterned mask (not shown) over the pad nitride layer 111, andetching the underlying structure by using the patterned mask as a mask.The etching may be performed using a wet etching process, a dry etchingprocess, or a combination thereof. After the shallow trench 120 isformed, the patterned mask may be removed using, for example, an ashingprocess followed by a wet clean process.

Next, the first liner 123 is formed over the sidewalls and the bottomsurface B4 of the shallow trench 120, as shown in FIG. 10 in accordancewith some embodiments. The respective step is illustrated as the stepS17 in the method 10 shown in FIG. 6 . More specifically, the oppositesidewalls SW1 and SW2 of the silicon layer 105 (i.e., the sidewalls ofthe silicon layer 105 exposed in the shallow trench 120) are covered byand in direct contact with the portions 123 a and 123 c of the firstliner 123, and the exposed sidewalls and the exposed surface of thesemiconductor substrate 101 in the shallow trench 120 (i.e., the bottomsurface B4 of the shallow trench 120) are covered by and in directcontact with the portion 123 b of the first liner 123.

In some embodiments, the first liner 123 is made of silicon oxide, suchas SiO₂, and is formed by an oxidation process. In some embodiments, theoxidation process for forming the first liner 123 is a selectiveoxidation due to different compositions of the layers in the SOI region107. In some embodiments, the exposed sidewalls and/or surfaces of thesilicon layer 105 and the semiconductor substrate 101 of the SOI region107 are completely covered by the first liner 123, while the sidewallsof the pad nitride layer 111, the pad oxide layer 109 and the buriedoxide layer 103 in the shallow trench 120 are at least partiallyexposed.

Subsequently, the second liner 125 is formed over the first liner 123,as shown in FIG. 11 in accordance with some embodiments. The respectivestep is illustrated as the step S19 in the method 10 shown in FIG. 6 .In some embodiments, the second liner 125 is conformally formed over thetop surface of the pad nitride layer 111 and lining the remainingportion of the shallow trench 120.

In some embodiments, the first liner 123 is completely covered by thesecond liner 125, and the exposed sidewalls SW7 and SW8 of the padnitride layer 111, the exposed sidewalls SW5 and SW6 of the pad oxidelayer 109 and the exposed sidewalls SW3 and SW4 of the buried oxidelayer 103 are covered by and in direct contact with the second liner125. In some embodiments, the second liner 125 is made of nitride, suchas silicon nitride, and is formed by nitridation process, such as arapid thermal nitridation (RTN) process.

Then, the third liner 127 is formed over the second liner 125, as shownin FIG. 12 in accordance with some embodiments. The respective step isillustrated as the step S21 in the method 10 shown in FIG. 6 . In someembodiments, the third liner 127 is conformally formed over the topsurface of the pad nitride layer 111 and lining the remaining portion ofthe shallow trench 120. In some embodiments, the third liner 127 is madeof silicon oxynitride, and is formed by an in-situ steam generation(ISSG) process.

Next, the trench filling layer 129 is formed over the third liner 127and filling the remaining portion of the shallow trench 120, as shown inFIG. 13 in accordance with some embodiments. The respective step isillustrated as the step S23 in the method 10 shown in FIG. 6 .

In some embodiments, the trench filling layer 129 is made of adielectric material, such as silicon oxide, silicon nitride, siliconoxynitride, silicon carbonitride, silicon oxide carbonitride, or acombination thereof. It should be noted that the material of the trenchfilling layer 129 is different from the materials of the second liner125 and the third liner 127, such that sufficient etching selectivitiesexist between the second liner 125 and the trench filling layer 129 andbetween the third liner 127 and the trench filling layer 129. Moreover,the trench filling layer 129 may be formed by a deposition process, suchas a CVD process or an ALD process.

Subsequently, referring back to FIG. 2 , a planarization process isperformed on the trench filling layer 129, the third liner 127, and thesecond liner 125 to expose the top surface of the pad nitride layer 111,such that the top surfaces of the trench filling layer 129, the thirdliner 127, and the second liner 125 are substantially coplanar with eachother, in accordance with some embodiments. The respective step isillustrated as the step S25 in the method 10 shown in FIG. 6 . In someembodiments, the planarization process is a chemical mechanicalpolishing (CMP) process. After the planarization process, the STIstructure 150 a in the array area of the semiconductor device structure100 is obtained.

Since there are multiple liners surrounding the trench filling layer 129in the STI structure 150 a, and etching selectivities exist between theliners and the trench filling layer 129, the sidewalls of the SOI region107 may be protected from being exposed during subsequent etchingprocess (for example, for recessing the trench filling layer 129). As aresult, electrical short between the semiconductor substrate 101 and thesilicon layer 105 may be prevented.

FIGS. 14-20 are cross-sectional views illustrating intermediate stagesof forming the cell area in the semiconductor device structure 200, inaccordance with some embodiments. As shown in FIG. 14 , thesemiconductor substrate 201 is provided. The semiconductor substrate 201may be similar to the semiconductor substrate 101 described above andthe description is not repeated herein.

In some embodiments, the well region 207 is formed in the semiconductorsubstrate 201. The well region 207 may be formed by an ion implantationprocess, and P-type dopants, such as boron (B), gallium (Ga), or indium(In), or N-type dopants, such as phosphorous (P) or arsenic (As), can beimplanted to form the well region 207, depending on the conductivitytype of the region of the semiconductor substrate 201 under the wellregion. As mentioned above, the conductivity type of the well region 207is opposite to the conductivity type of the region of the semiconductorsubstrate 201 under the well region 207. For example, in someembodiments, the well region 207 is p-type, and the region of thesemiconductor substrate 201 under the well region 207 is n-type.

Next, the pad oxide layer 209 and the pad nitride layer 211 aresequentially formed over the semiconductor substrate 201 and coveringthe well region 207, as shown in FIG. 15 in accordance with someembodiments. The respective steps are illustrated as the step S11 andS13 in the method 10 shown in FIG. 6 . Some materials and processes usedto form the pad oxide layer 209 and the pad nitride layer 211 aresimilar to, or the same as those used to form the pad oxide layer 109and the pad nitride layer 111, respectively, and details thereof are notrepeated herein.

After the pad nitride layer 211 is formed, a shallow trench 220 isformed penetrating through the pad nitride layer 211 and the pad oxidelayer 209 and extending into the well region 207, as shown in FIG. 16 inaccordance with some embodiments. In some embodiments, the bottomsurface B5 of the shallow trench 220 is located in the well region 207and higher than the bottom surface B6 of the well region 207. Therespective step is illustrated as the step S15 in the method 10 shown inFIG. 6 . Some processes used to form the shallow trench 220 are similarto, or the same as those used to form the shallow trench 120, anddetails thereof are not repeated herein.

Next, the first liner 223 is formed over the sidewalls and the bottomsurface B5 of the shallow trench 220, as shown in FIG. 17 in accordancewith some embodiments. The respective step is illustrated as the stepS17 in the method 10 shown in FIG. 6 . More specifically, the exposedsidewalls SW9 and SW10 and the exposed surface of the well region 207(i.e., the bottom surface B5 of the shallow trench 220) are covered byand in direct contact with the first liner 223.

Some materials and processes used to form the first liner 223 aresimilar to, or the same as those used to form the first liner 123 of thesemiconductor device structure 100, and details thereof are not repeatedherein. It should be noted that the oxidation process for forming thefirst liner 223 is a selective oxidation due to different compositionsof the well region 207, the pad oxide layer 209 and the pad nitridelayer 211. In some embodiments, the exposed sidewalls and/or surfaces ofthe well region 207 are completely covered by the first liner 223, whilethe sidewalls of the pad nitride layer 211 and the pad oxide layer 209in the shallow trench 220 are at least partially exposed.

Subsequently, the second liner 225 is formed over the first liner 223,as shown in FIG. 18 in accordance with some embodiments. The respectivestep is illustrated as the step S19 in the method 10 shown in FIG. 6 .Similar to the second liner 125 of the semiconductor device structure100, the second liner 225 is conformally formed over the top surface ofthe pad nitride layer 211 and lining the remaining portion of theshallow trench 220.

In some embodiments, the first liner 223 is completely covered by thesecond liner 225, and the exposed sidewalls SW13 and SW14 of the padnitride layer 211, the exposed sidewalls SW11 and SW12 of the pad oxidelayer 209 are covered by and in direct contact with the second liner225. Some materials and processes used to form the second liner 225 aresimilar to, or the same as those used to form the second liner 125 ofthe semiconductor device structure 100, and details thereof are notrepeated herein.

Then, the third liner 227 is formed over the second liner 225, as shownin FIG. 19 in accordance with some embodiments. The respective step isillustrated as the step S21 in the method 10 shown in FIG. 6 . In someembodiments, the third liner 227 is conformally formed over the topsurface of the pad nitride layer 211 and lining the remaining portion ofthe shallow trench 220. Some materials and processes used to form thethird liner 227 are similar to, or the same as those used to form thethird liner 127 of the semiconductor device structure 100, and detailsthereof are not repeated herein.

Next, the trench filling layer 229 is formed over the third liner 227and filling the remaining portion of the shallow trench 220, as shown inFIG. 20 in accordance with some embodiments. The respective step isillustrated as the step S23 in the method 10 shown in FIG. 6 . Somematerials and processes used to form the trench filling layer 229 aresimilar to, or the same as those used to form the trench filling layer129 of the semiconductor device structure 100, and details thereof arenot repeated herein. It should be noted that the material of the trenchfilling layer 229 is different from the materials of the second liner225 and the third liner 227, such that sufficient etching selectivitiesexist between the second liner 225 and the trench filling layer 229 andbetween the third liner 227 and the trench filling layer 229.

Subsequently, referring back to FIG. 4 , a planarization process isperformed on the trench filling layer 229, the third liner 227, and thesecond liner 225 to expose the top surface of the pad nitride layer 211,such that the top surfaces of the trench filling layer 229, the thirdliner 227, and the second liner 225 are substantially coplanar with eachother, in accordance with some embodiments. The respective step isillustrated as the step S25 in the method 10 shown in FIG. 6 . In someembodiments, the planarization process is a CMP process. After theplanarization process, the STI structure 250 a in the array area of thesemiconductor device structure 200 is obtained.

Since there are multiple liners surrounding the trench filling layer 229in the STI structure 250 a, and etching selectivities exist between theliners and the trench filling layer 229, the sidewalls of the wellregion 207 may be protected from being exposed during subsequent etchingprocess (for example, for recessing the trench filling layer 229). As aresult, electrical short may be prevented.

Embodiments of the semiconductor device structures 100 and 200 andmethod for forming the same are provided in the disclosure. In someembodiments, the semiconductor device structure 100 includes the STIstructure 150 a disposed in the SOI region 107. The STI structure 150 aincludes the first liner 123 contacting the semiconductor substrate 101and the silicon layer 105 in the SOI region 107, the second liner 125covering the first liner 123, the third liner 127 covering the secondliner 125, and the trench filling layer 129 disposed over the thirdliner 127 and separated from the second liner 125 by the third liner127. Since there are multiple liners disposed between the trench fillinglayer 129 and the SOI region 107, and etching selectivities existbetween the liners and the trench filling layer 129, the sidewalls ofthe SOI region 107 may be protected from being exposed during subsequentetching process (for example, for recessing the trench filling layer129). This may prevent electrical short between the semiconductorsubstrate 101 and the silicon layer 105.

In some embodiments, the semiconductor device structure 200 includes theSTI structure 250 a disposed in the well region 207 of the semiconductorsubstrate 201. The STI structure 250 a includes the first liner 223contacting the well region 207, the second liner 225 covering the firstliner 223, the third liner 227 covering the second liner 225, and thetrench filling layer 229 disposed over the third liner 227 and separatedfrom the second liner 225 by the third liner 227. Since there aremultiple liners disposed between the trench filling layer 229 and thewell region 207, and etching selectivities exist between the liners andthe trench filling layer 229, the well region 207 may be protected frombeing exposed during subsequent etching process (for example, forrecessing the trench filling layer 229). This may prevent electricalshort of the semiconductor device structure 200 in subsequent processingsteps (for example, for forming a conductive component over the wellregion 207).

In one embodiment of the present disclosure, a semiconductor devicestructure is provided. The semiconductor device structure includes asilicon-on-insulator (SOI) region. The SOI region includes asemiconductor substrate, a buried oxide layer disposed over thesemiconductor substrate, and a silicon layer disposed over the buriedoxide layer. The semiconductor device structure also includes a firstshallow trench isolation (STI) structure penetrating through the siliconlayer and the buried oxide layer and extending into the semiconductorsubstrate. The first STI structure includes a first liner contacting thesemiconductor substrate and the silicon layer, a second liner coveringthe first liner and contacting the buried oxide layer, and a third linercovering the second liner. The first liner, the second liner and thethird liner are made of different materials. The first STI structurealso includes a first trench filling layer disposed over the third linerand separated from the second liner by the third liner.

In another embodiment of the present disclosure, a method for forming asemiconductor device structure is provided. The method includes forminga pad oxide layer over a semiconductor substrate, and forming a padnitride layer over the pad oxide layer. The method also includes forminga shallow trench penetrating through the pad nitride layer and the padoxide layer and extending into the semiconductor substrate, and forminga first liner over sidewalls and a bottom surface of the shallow trench.The method further includes forming a second liner over the first liner,and forming a third liner over the second liner. In addition, the methodincludes filling a remaining portion of the shallow trench with a trenchfilling layer over the third liner, and planarizing the second liner,the third liner and the trench filling layer to expose the pad nitridelayer. The first liner and the remaining portions of the second liner,the third liner and the trench filling layer collectively form a shallowtrench isolation (STI) structure in an array area.

The embodiments of the present disclosure have some advantageousfeatures. By forming multiple liners in the STI structure and betweenthe trench filling layer and the semiconductor substrate, the sidewallsof the semiconductor substrate interfacing with the STI structure may beprotected from being exposed during subsequent etching process, whichprevents electrical short. As a result, the device performance may beenhanced.

Although the present disclosure and its advantages have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made herein without departing from the spirit andscope of the disclosure as defined by the appended claims. For example,many of the processes discussed above can be implemented in differentmethodologies and replaced by other processes, or a combination thereof.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present disclosure. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, and steps.

What is claimed is:
 1. A method for forming a semiconductor devicestructure, comprising: forming a pad oxide layer over asilicon-on-insulator (SOI) region comprising a semiconductor substrate,a buried oxide layer over the semiconductor substrate, and a siliconlayer over the buried oxide layer; forming a pad nitride layer over thepad oxide layer; forming a shallow trench penetrating through the padnitride layer, the pad oxide layer, the silicon layer and the buriedoxide layer, and extending into the semiconductor substrate; forming afirst liner over sidewalls of the silicon layer and a bottom surface ofthe semiconductor substrate in the shallow trench; forming a secondliner over the first liner; forming a third liner over the second liner;filling a remaining portion of the shallow trench with a trench fillinglayer over the third liner; and planarizing the second liner, the thirdliner and the trench filling layer to expose the pad nitride layer,wherein the first liner and the remaining portions of the second liner,the third liner and the trench filling layer collectively form a shallowtrench isolation (STI) structure in an array area.
 2. The method forforming a semiconductor device structure of claim 1, wherein the secondliner is formed in direct contact with sidewalls of the pad oxide layerand sidewalls of the pad nitride layer.
 3. The method for forming asemiconductor device structure of claim 1, wherein a first etchingselectivity exists between the second liner and the trench fillinglayer, and a second etching selectivity exists between the third linerand the trench filling layer.
 4. The method for forming a semiconductordevice structure of claim 1, wherein before forming the pad oxide layer,the method further comprises: forming a buried oxide layer over thesemiconductor substrate; and forming a silicon layer over the buriedoxide layer, wherein the shallow trench penetrates through the buriedoxide layer and the silicon layer, and wherein the first liner is formedby performing an oxidation process on the silicon layer and thesemiconductor substrate.
 5. The method for forming a semiconductordevice structure of claim 4, wherein the second liner is formed by arapid thermal nitridation (RTN) process, and the third liner is formedby an in-situ steam generation (ISSG) process.
 6. The method for forminga semiconductor device structure of claim 1, wherein before forming thepad oxide layer, the method further comprises: forming a well region inthe semiconductor substrate, wherein the well region is p-type, and aregion of the semiconductor substrate under the well region is n-type,and wherein after the shallow trench is formed, a bottom surface of theshallow trench is higher than a bottom surface of the well region.